Sputter Deposition

A UHV sputter deposition system is available for the preparation of thin films, multilayer films, and oxide films.

Sputtering System

  • LoadLock Chamber
    • O2 plasma source
  • Transfer Chamber
    • Mask exchanger
    • Heating station (300 - 1300K)
    • Residual gas analysis
  • Sputter Chamber 1
    • RF ion source with neutralizer (for oxide layers)
      • 4'' sputter targets
      • Target changer for 2 additional sources
    • Plasma source/ion source with neutralizer
    • RHEED-electron gun
    • Low temperature substrate holder
      • 80 - 420K
      • Sample rotation
  • Sputter Chamber 2: 4 x 2" targets
    • 2 RF plasma sources / magnetron
    • 2 DC plasma sources / magnetron
    • High temperature substrate holder
      • 300 - 900K
      • Rotation

uhv1

Two views of the sputter deposition system.

uhv2